rev.1.00 page 1 of 9 jul 27, 2012 preliminary datasheet rjq6015dpm 600v - 18a - igbt and diode application: inverter features ? short circuit withstand time (5 ? s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.6 v typ. (at i c = 37 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode (100 ns typ.) in one package ? trench gate and thin wafer technology ? high speed switching t f = 40 ns typ. (at v cc = 300 v, v ge = 15 v, i c = 37 a, rg = 5 ? , ta = 25c, inductive load) outline igbt1 diode1 igbt2 diode2 1. gate (1) 2. collector (1) 3. emitter (1), collector (2) 4. emitter (2) 5. gate (2) 1 2 3 4 5 2 1 3 5 4 renesas package code: prss0005zb-a (package name: to-3pfm-5) absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage/diode reverse voltage v ces /v r 600 v gate to emitter voltage v ges 30 v tc = 25c i c note1 37 a collector current tc = 100c i c note1 18 a collector peak current i c(peak) note3 150 a collector to emitter diode forward current i df note1 20 a collector to emitter diode forward peak current i df(peak) note3 150 a collector dissipation p c note2 50 w junction to case the rmal resistance (igbt) ? j-c 2.5 c/w junction to case thermal resistance (diode) ? j-cd 4.5 c/w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. limited by tj max. 2. value at tc = 25c 3. pulse width limited by maximum safe operating area. r07ds0848ej0100 rev.1.00 jul 27, 2012
rjq6015dpm preliminary rev.1.00 page 2 of 9 jul 27, 2012 electrical characteristics igbt1, igbt2 (ta = 25c) item symbol min typ max unit test conditions collector to emitter breakdown voltage/diode reverse voltage v br(ces) /v r 600 ? ? v ? i c =10 ? a, v ge = 0 zero gate voltage collector current /diode reverse current i ces /i r ? ? 5 ? a v ce = 600 v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4.0 ? 6.0 v v ce = 10 v, i c = 1 ma v ce(sat) ? 1.6 2.2 v i c = 37 a, v ge = 15 v note4 collector to em itter saturation voltage v ce(sat) ? 2.0 ? v i c =75 a, v ge = 15 v note4 input capacitance cies ? 1900 ? pf output capacitance coes ? 120 ? pf reveres transfer capacitance cres ? 50 ? pf v ce = 25 v v ge = 0 f = 1 mhz total gate charge qg ? 78 ? nc gate to emitter charge qge ? 12 ? nc gate to collector charge qgc ? 32 ? nc v ge = 15 v v ce = 300 v i c = 37 a turn-on delay time t d(on) ? 50 ? ns rise time t r ? 40 ? ns turn-off delay time t d(off) ? 135 ? ns fall time t f ? 40 ? ns turn-on energy e on ? 0.65 ? mj ? turn-off energy e off ? 0.4 ? mj ? total switching energy e total ? 1.05 ? mj ? v cc = 300 v v ge = 15 v i c = 37 a rg = 5 ?? inductive load short circuit withstand time t sc 3.0 5.0 ? ? s v cc ? 360 v, v ge = 15 v notes: 4. pulse test diode1, diode2 (ta = 25c) item symbol min typ max unit test conditions forward voltage v f ? 1.4 1.9 v i f = 30 a reverse current i r ? ? 1 ? a v r = 600 v reverse recovery time t rr ? 100 ? ns frd reverse recovery charge q rr ? 0.18 ? ? c frd peak reverse recovery current i rr ? 4.2 ? a i f = 30 a di/dt = 100 a/ ? s
rjq6015dpm preliminary rev.1.00 page 3 of 9 jul 27, 2012 main characteristics typical output characteristics 150 125 100 75 50 25 12345 collector current i c (a) 0 0 collector to emitter voltage v ce (v) 150 125 100 75 50 25 0 tc = 2 5 c pulse test v ge = 8 v 15 v 18 v 10 v 12 v collector current i c (a) collector to emitter voltage v ce (v) maximum safe operation area typical output characteristics 12345 collector current i c (a) 0 collector to emitter voltage v ce (v) v ge = 8 v 15 v 10 v collector current i c (a) collector to emitter voltage v ce (v) turn-off soa 0 200 400 600 800 200 150 100 50 0 18 v 12 v 1000 100 1 10 0.1 1 100 10 1000 tc = 25 c single pulse 100 s pw = 10 s tc = 150 c pulse test v ge = 15 v tj = 125 c single pulse gate to emitter voltage v ge (v) collector to emitter satularion voltage vs. gate to emitter voltage (typical) collector to emitter satularion voltage vs. gate to emitter voltage (typical) collector to emitter satularion voltage v ce(sat) (v) collector to emitter satularion voltage v ce(sat) (v) gate to emitter voltage v ge (v) 5 4 3 2 1 4 8 12 20 16 tc = 2 5 c pulse test i c = 37 a 75 a 5 4 3 2 1 4812 20 16 i c = 37 a 75 a tc = 150 c pulse test
rjq6015dpm preliminary rev.1.00 page 4 of 9 jul 27, 2012 collector current i c (a) gate to emitter voltage v ge (v) transfer characteristics (typical) 0 04812 20 16 v ce = 10 v pulse test tc = 2 5 c 150 c 150 125 100 75 50 25 collector to emitter saturation voltage vs. case temparature (typical) collector to emitter saturation voltage v ce(sat) (v) case temparature tc ( c) ? 25 0 25 75 125 50 100 150 2.8 1.6 1.2 2.0 2.4 37 a 18.5 a i c = 75 a v ge = 15 v pulse test 10 8 6 4 2 0 gate to emitter cutoff voltage vs. case temparature (typical) ? 25 0 25 75 125 50 100 150 gate to emitter cutoff voltage v ge(off) (v) v ce = 10 v pulse test case temparature tc ( c) 1 ma i c = 10 ma
rjq6015dpm preliminary rev.1.00 page 5 of 9 jul 27, 2012 110 100 1 10 0.1 100 1000 10 switching characteristics (typical) (3) gate registance rg ( ) (inductive load) switching characteristics (typical) (4) gate registance rg ( ) (inductive load) eoff eon v cc = 300 v, v ge = 15 v i c = 37 a, tc = 150 c swithing energy losses e (mj) switching times t (ns) 110 100 0.01 1 0.1 100 10 v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c swithing energy losses e (mj) 110100 110100 collector current i c (a) (inductive load) eoff eon 1 100 10 1000 switching characteristics (typical) (1) switching characteristics (typical) (2) collector current i c (a) (inductive load) switching times t (ns) v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c t d(off) t d(on) t f t r v cc = 300 v, v ge = 15 v i c = 37 a, tc = 25 c t d(off) t r t f t d(on) 10 100 1000 50 25 150 75 125 100 switching characteristics (typical) (5) t d(on) case temperature tc (c) (inductive load) switching times t (ns) v cc = 300 v, v ge = 15 v i c = 37 a, rg = 5 t f t d(off) t r 0.1 1 10 50 25 150 75 125 100 case temperature tc (c) (inductive load) switching characteristics (typical) (6) eoff eon swithing energy losses e (mj) v cc = 300 v, v ge = 15 v i c = 37 a, rg = 5
rjq6015dpm preliminary rev.1.00 page 6 of 9 jul 27, 2012 diode current slope di f /dt (a/ s) reverse recovery time t rr (ns) reverse recovery time vs. diode current slope (typical) 100 50 300 250 200 150 0 04080 200 120 160 04080 200 120 160 04080 200 120 160 0.8 0.4 2.0 1.6 1.2 v cc = 300 v i f = 30 a tc = 150 c 25 c diode current slope di f /dt (a/ s) reverse recovery current i rr (a) reverse recovery current vs. diode current slope (typical) diode current slope di f /dt (a/ s) reverse recovery charge q rr ( c) reverse recovery charge vs. diode current slope (typical) 0 v cc = 300 v i f = 30 a tc = 150 c 25 c 12 8 4 16 0 v cc = 300 v i f = 30 a tc = 150 c 25 c forward current i f (a) c-e diode forward voltage v cef (v) forward current vs. forward voltage (typical) 0 120 80 40 100 60 20 0123 4 tc = 2 5 c 150 c v ce = 0 v pulse test capacitance c (pf) 10 100 1000 10000 0 100 50 150 200 250 300 cies coes cres gate charge qg (nc) dynamic input characteristics (typical) typical capacitance vs. collector to emitter voltage 800 600 400 200 0 0 16 12 8 4 0 20 40 60 80 100 v ge v ce v ge = 0 v f = 1 mhz tc = 25 c collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) v cc = 300 v i c = 37 a tc = 25 c
rjq6015dpm preliminary rev.1.00 page 7 of 9 jul 27, 2012 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (igbt) pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (diode) 0.01 0.1 10 1 100 1 m 10 m 100 m 1 10 100 100 1 m 10 m 100 m 1 10 100 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 2.5 c/w, tc = 25 c tc = 25 c 0.01 1 0.1 10 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 4.5 c/w, tc = 25 c 0.05 0.2 0.1 0.5 d = 1 tc = 25 c 0.01 0.02 1 shot pulse 0.05 0.2 0.1 0.5 d = 1 0.02 1 shot pulse 0 .01
rjq6015dpm preliminary rev.1.00 page 8 of 9 jul 27, 2012 switching time test circuit diode reverse recovery time test circuit waveform waveform diode clamp d.u.t d.u.t rg l v cc v cc t rr i rr di f /dt 0.9 i rr i f i f rg t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c 0.5 i rr l 0
rjq6015dpm preliminary rev.1.00 page 9 of 9 jul 27, 2012 package dimensions prev i ous code prss0005zb - a t o - 3p f m - 5 mass [t yp .] 5 . 3g sc - 93 un i t : mm 2 . 725 19 . 7 0 . 519 . 9 0 . 3 5 . 0 0 . 3 2 . 0 0 . 3 5 . 5 0 . 3 3 . 2 0 . 3 3 . 2 15 . 6 0 . 3 + 0 .4 ? 0 . 2 1 .4 0 0 . 86 2 . 25 0 . 3 5 . 0 0 . 3 0 . 66 + 0 . 2 ? 0 . 1 2 . 725 0 . 9 + 0 . 2 ? 0 . 1 r ene sas code j eit a package code package n ame t o - 3p f m - 5 ordering information orderable part number quan tity shipping container rjq6015dpm-00#t0 360 pcs box (tube)
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